Document Details

Document Type : Article In Journal 
Document Title :
Analysis of interface states of FeO-Al2O3 spinel composite film/p-Si diode by conductance technique
Analysis of interface states of FeO-Al2O3 spinel composite film/p-Si diode by conductance technique
 
Subject : physics 
Document Language : English 
Abstract : The interface states and series resistance properties of the Al/FeO-Al2O3/p-Si diode were investigated by the capacitance (C) and conductance (G) measurements. The measured capacitance and conductance values were corrected to eliminate the effect of series resistance to obtain the real capacitance and conductance values of the diode. The C and G characteristics indicate the presence of interface states at the interface of the diode. The interface states density, N-ss, was determined using Hill-Coleman method, and it was found that the density of interface states is decreased with the frequency. The obtained results suggest that the series resistance and interface states affect significantly the electronic parameters of the Al/FeO-Al2O3/p-Si diode. 
ISSN : 0947-8396 
Journal Name : APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 
Volume : 122 
Issue Number : 3 
Publishing Year : 1437 AH
2016 AD 
Article Type : Article 
Added Date : Sunday, August 13, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
A TatarogluTataroglu, A InvestigatorDoctorateademta71@gmail.com
A.A Al-Ghamdi,Al-Ghamdi, A.A ResearcherDoctorate 
F El-TantawyEl-Tantawy, F ResearcherDoctorate 
W. A. FarooqFarooq, W. A ResearcherDoctorate 
F YakuphanogluYakuphanoglu, F ResearcherDoctorate 

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