Document Details

Document Type : Article In Journal 
Document Title :
Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE
Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE
 
Subject : physics 
Document Language : English 
Abstract : The effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottky barrier diodes was studied in the temperature range of 300-420 K. Comparing the current-voltage (I-V) characteristics of two samples with epitaxial layer thicknesses of 2 mu m and 1.5 mu m discloses that the device with a thinner epitaxial layer has a higher barrier height and hence a lower reverse current. Specifically, we found that increasing the Al0.33Ga0.67As thickness from 1.5 mu m to 2 mu m would lower the value of the barrier height by similar to 12% at 300 K. We associated such retrogression of the electrical quality to the presence of deep level traps in the Si:AlxGa1-xAs layer. For both samples we found that the effective barrier height decreases with increasing the annealing temperature. Yet, the sample with a thinner layer showed more stability and less temperature dependence. (C) 2015 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/). 
ISSN : 2211-3797 
Journal Name : Results in Physics 
Volume : 6 
Issue Number : 1 
Publishing Year : 1437 AH
2016 AD 
Article Type : Article 
Added Date : Monday, August 14, 2017 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
N.A Al-AhmadiAl-Ahmadi, N.A Researcher nalahmadi@kau.edu.sa
H.A (Al-Jawhari,Al-Jawhari,, H.A ResearcherDoctorate 

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