Document Details

Document Type : Thesis 
Document Title :
FABRICATION AND CHARACTERIZATION OF METAL CONTACTS TO SiC
تصنيع و دراسة خصائص اتصال معدن بكربيد السيليكون
 
Subject : physics department 
Document Language : Arabic 
Abstract : Schottky diodes were fabricated on n-type 4H-SiC with Nickel ohmic contacts and Nickel Schottky contacts. An improved and revised fabrication process was developed during this research project. The Schottky diodes were electrically characterized using I-V and C-V measurements to extract electrical parameters which include Schottky barrier height, ideality factor, the diode series resistance, and doping density. Ni/4H-SiC was annealed at 700ºC to create the ohmic contact from Schottky. Schottky barrier height was raised and the ideality factor was reduced. Significant improvement was observed in the ideality factor of Ni/4H-SiC diodes. XRD was performed on Ni/4H-SiC samples to investigate the effects of annealing at the Nickel-SiC interface. Analysis of the XRD results showed Nickel-Silicon bonding at the interface. Electrical characterization of Ni/4H-SiC showed that the devices had a low ideality factor and represented some of the best results obtained in our research lab. The thesis establishes the effect of annealing on the transformation of Ni/4H-SiC to ohmic. The barrier height discrepancy were analyze using thermionic emission theory, Gaussian distribution model, flat-band temperature depend coefficient. Also, the ideality factor was analyzed based on To-effect and thermionic field emission theory. Richardson constant obtained using these models were in close agreement with the theoretical value. 
Supervisor : Prof. Fahad M Almarzouki 
Thesis Type : Master Thesis 
Publishing Year : 1434 AH
2013 AD 
Co-Supervisor : Prof. Azhar A Ansari 
Added Date : Monday, March 11, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
محمد عبدالله الغامديAlghamdi, Mohammd AbdullahResearcherMaster 

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