Document Details

Document Type : Article In Journal 
Document Title :
P V and C V characteristics of n - GaN — metal contact
PV وCV خصائص ن - الجاليوم - الاتصال المعادن
 
Subject : P V and C V characteristics of n - GaN — metal contact 
Document Language : English 
Abstract : GaHiurn nitride (GaN) is a next-generation semiconductor material with excellent potential for a range of technological application ,extending beyond the possibilities of established materials such as Si and GaAs. GaN is a wide band gap emiconductor making it well suited to blue/ violet lightemittng diodes lasers and optical detectors, valuable for a range of application including wide bandwidth optical communications1 high-density data storage, and energy-efficient generation of natural white light. Its wide band gap and high chemical stability also offer the prospect of high temperature electronic devices, of particular interest for down-hole instrumentation in the oil and gas industry and elsewhere. High saturated drift velocity and high thermal conductivity are valuable for high power switches for traction motor control 7anci devices for microwave generation .Tremendous amount of research activity is taking place worldwide in fabricating and characterizing devices made from Ill-Nitricles and their alloys. We have carried out the current-voltage measurements and obtained clear rectifying junction for the case of GaN-Au ,while the system of Al-GaN-Al showed omic characteristics japing concentration and barrier height have been determined from the capacitance-voltage measurements. 
ISSN : 0973-3469 
Journal Name : Materials Science Research India 
Volume : 4 
Issue Number : 1 
Publishing Year : 1428 AH
2007 AD 
Article Type : Article 
Added Date : Monday, February 25, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
سعيد سعد الاميرalamir, said saadResearcherDoctoratessaameer@yahoo.com

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